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Polar3TM HiPerFET Leistungs-MOSFETN-Kanal-VerstärkungsmodusSchnelle intrinsische Diode

Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesLow RDS(on)...

Fast Recovery Epitaxial Diode
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Leistungs-Schottky-Gleichrichter, 80 V, 70A (2x35), TO-247ADGemeinsame KathodeMerkmale:• Internationales...

Polar Leistungs-MOSFETN-Kanal-VerstärkungsmodusSchnelle intrinsische Diode

X3-Class HiPerFET Leistungs-MOSFETN-Kanal-VerstärkungsmodusSchnelle intrinsische Diode
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DSI30-16AS SMD-Standard-Gleichrichter-EinzeldiodeMerkmale / Vorteile:• Planar passivierte Chips• Sehr...

Thyristoren für den Betrieb an NetzspannungBei den Kunststoffgehäusen bildet die Gehäuserückseite die...

TrenchP Power MOSFETP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Power MOSFETP-Channel Enhancement ModeAvalanche RatedFeaturesSilicon Chip on Direct-Copper Bond (DCB)...

The LCA110 is a 1-Form-A Solid State Relay which uses optically coupled MOSFET technology to provide...
-0,012-Ohm,-TO-247AD-von-IXYS-2159070656.png)
TrenchT2 HiperFETPower MOSFETN-Channel Enhancement Mode Avalanche RatedFast Intrinsic DiodeFeaturesHigh...

PolarP Power MOSFETsP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational standard...

Fast Recovery Epitaxial Dioden (FRED) zur Verwendung als FreilaufdiodeSoft-Recovery-Verhalten vermeidet...

DSI30-16A Standard-Gleichrichter-EinzeldiodeMerkmale / Vorteile:• Planar passivierte Chips• Sehr niedriger...

PolarHV HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational...

LAA110, Zweifach einpoliges OptoMOS®-RelaisBeschreibung:Das LAA110 ist ein Dual 1-Form-A Solid State...

Power MOSFETN-Channel Enhancement ModeFast Intrinsic DiodeFeaturesSilicon Chip on Direct-Copper Bond...

Polar HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesLow...

Fast Recovery Epitaxial Dioden (FRED) zur Verwendung als FreilaufdiodeSoft-Recovery-Verhalten vermeidet...
-0,23-Ohm,-TO-247-von-IXYS-2159013658.png)
HiPerFET™ Leistungs-MOSFET stehen jetzt auch als Q-Klasse zur Verfügung. Bei dieser Reihe wurde durch...

Fast Recovery Epitaxial Diode
-0,039-Ohm,-TO220AB-von-IXYS-2159129143.png)
TrenchP Power MOSFETP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...
-0,085-Ohm,-TO-264AA-von-IXYS-2159021462.png)
Eigenschaften• internationale Standard-Gehäuse• schnelle intrinsische Diode• Avalanche-Bewertung• niedriger...

Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational Standard...

Power MOSFETISOPLUS247TM(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedFast...

Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED)DSEI 120-12A, Vrrm = 1200 V, Ifavm = 109 A, trr = 40 nsMerkmale:Internationales...

High Voltage Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational...
-0,0026-Ohm,-SOT227B-von-IXYS-2159070677.png)
Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational Standard...

Polar Leistungs-MOSFETP-Kanal Anreicherungsmodus

Polar3TM HiperFETTMPower MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesFast...

LBA110 is 350V, 120mA, 35? independent 1-Form-A and 1-Form-B relays. It is designed to provide an ideal...
-1-Ohm,-TO220AB-von-IXYS-2159070700.png)
PolarP Power MOSFETP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Polar HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesLow...

Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesDynamic dv/dt RatingAvalanche...
-0,2-Ohm,-TO-247AD-von-IXYS-2159070659.png)
HiperFETPower MOSFETsQ3-ClassN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesLow...

PolarHV HiPerFETPower MOSFETN-Channel Enhancement Mode = 200 nsAvalanche RatedFast Intrinsic DiodeFeaturesInternational...
,-TO-247AD-von-IXYS-2159147064.png)
Leistungs-Schottky-Gleichrichter, 150 V, 60A (2x30), TO-247ADGemeinsame KathodeMerkmale:• Internationales...

Fast Recovery Epitaxial Diode

Avalanchediode, FP-CASE, 1600V, 2,3AMerkmale• Kunststoff-Standardverpackung• Planare passivierte ChipsVorteile:•...

Power MOSFETHiPerFETN-Channel Enhancement Mode = 300nsAvalanche RatedFast Intrinsic DiodeFeaturesInternational...
-0,013-Ohm,-TO220AB-von-IXYS-2159070711.png)
TrenchP Power MOSFETsP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Polar HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesInternational...

Fast Recovery Epitaxial Dioden (FRED) zur Verwendung als FreilaufdiodeSoft-Recovery-Verhalten vermeidet...

LBA110 is 350V, 120mA, 35? independent 1-Form-A and 1-Form-B relays. It is designed to provide an ideal...

Fast Recovery Epitaxial Diode

Polar2TM HiPerFETTM Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic Diode
-0,018-Ohm,-TO220AB-von-IXYS-2159070709.png)
TrenchMV Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational standard packages175°C...

The LCB110 is a 1-Form-B (normally closed) relay which uses optically coupled MOSFET technology to provide...

Polar3 HiPerFET Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesInternational...

TrenchT2 HiperFET Leistungs-MOSFETN-Kanal-VerstärkungsmodusSchnelle intrinsische Diode

Eigenschaften• schnelle intrinsische Diode• internationale Standardgehäuse• ungeklemmtes induktives Schalten...

Fast Recovery Epitaxial Diode

Bauform: TO-247Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain: 50A (Tc) Vgs: +-30 VTemperaturbereich:...
-0,0054-Ohm,-TO-220AB-von-IXYS-2159070702.png)
TrenchT2 Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Fast Recovery Epitaxial Diode
-0,014-Ohm,-TO220AB-von-IXYS-2159070710.png)
IXTP80N10T, TrenchTM Leistungs-MOSFETMerkmale:• Ultra-niedriger Einschaltwiderstand• Avalanche-Bewertung•...

TrenchP Power MOSFETsP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...
-von-IXYS-2159037665.png)
DSI30-12AS SMD-Standard-Gleichrichter-EinzeldiodeMerkmale / Vorteile:• Planar passivierte Chips• Sehr...

LAA110, Zweifach einpoliges OptoMOS®-RelaisBeschreibung:Das LAA110 ist ein Dual 1-Form-A Solid State...

PolarP Power MOSFET(Electrically Isolated Tab)P-Channel Enhancement ModeAvalanche RatedFeaturesSilicon...

Hochspannungs-Hochverstärkungs-BiMOSFET Monolithischer bipolarer MOS-TransistorMerkmale:• Monolithische...

The LCA110 is a 1-Form-A Solid State Relay which uses optically coupled MOSFET technology to provide...

PolarHVTMPower MOSFETN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedFeaturesFast Recovery...

Polar3 HiperFETPower MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesFast...

DSI30-12A Standard-Gleichrichter-EinzeldiodeMerkmale / Vorteile:• Planar passivierte Chips• Sehr niedriger...

TrenchP Power MOSFETP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

TrenchP Leistungs-MOSFETP-Kanal Anreicherungsmodus
-0,065-Ohm,-TO220AB-von-IXYS-2200053719.png)
TrenchP Power MOSFETsP-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Fast Recovery Epitaxial Diode

TrenchT2 Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational Standard PackagesAvalanche...

Power MOSFET(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFeaturesSilicon chip...

Fast Recovery Epitaxial Diode

Trench Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierFeaturesHigh Current...

Polarität: Anode am Gehäuse, I-Typen: Kathode am Gehäuse

Trench Gate Power MOSFETN-Channel Enhancement ModeFeaturesAvalanche RatedHigh Current Handling CapabilityFast...

Hochspannungs-BiMOSFET Monolithisch bipolar MOS-Transistor, N-Kanal, AnreicherungsmodusMerkmale:Hochspannungs-PaketErsetzt...
-0,0075-Ohm,-TO264AA-von-IXYS-2159070695.png)
Power MOSFETN-Channel Enhancement ModeAvalanche RatedFeaturesInternational standard packageUnclamped...