IXFN360N10T - MOSFET N-Kanal, 100 V, 360 A, RDS(on) 0,0026 Ohm, SOT227B
-0,0026-Ohm,-SOT227B-von-IXYS-2159070677.png?w=800 "IXFN360N10T - MOSFET N-Kanal, 100 V, 360 A, RDS(on) 0,0026 Ohm, SOT227B")
Produktbeschreibung
Power MOSFETN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeFeaturesInternational Standard Package175°C Operating TemperatureHigh Current Handling CapabilityAvalanche RatedFast Intrinsic RectifierLow RDS(on)AdvantagesEasy to MountSpace SavingsHigh Power DensityApplicationsDC-DC ConvertersBattery ChargersSwitch-Mode and Resonant-Mode Power SuppliesDC ChoppersAC Motor DrivesUninterruptible Power SuppliesHigh Speed Power Switching Applications
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